Optoelectronics & lighting
Optoelectronics
Light-emitting and light-sensing devices, the optics that shape the beam, and the modules they are built into — developed and manufactured in our own cleanrooms and optical shops.
Made at Penang · Suzhou · Bac Ninh
Development and manufacture
This is the oldest engineering discipline in the group and the one with the deepest development team. Drawings arrive in ISO 10110 notation and come back as a tolerance budget rather than a yes: where a surface figure drives cost without driving performance, our optical designers say which line to relax and what it saves. For emitters and detectors the same applies to the epitaxial structure, where a small change in the active region often buys more than a tighter specification elsewhere.
Epitaxy, wafer processing, die singulation, surface generation, deterministic polishing, ion-assisted coating, active alignment and hermetic sealing all happen inside our own buildings. Keeping the chain unbroken matters here more than anywhere else in the group, because a coating defect and a die defect look identical at final test and only a single owner can tell them apart.
Product scope
Semiconductor laser diodes
Fabry-Perot and DFB emitters from 650 to 1650 nm in TO-can, butterfly and coaxial packages, burned in and wavelength binned.
Photodetectors and optical sensors
Silicon and InGaAs PIN diodes, avalanche photodiodes and photodiode arrays, with matched transimpedance front ends.
Optical fibre preforms and cables
MCVD and OVD preforms drawn to single-mode and multimode fibre, cabled as loose tube, ribbon and tight-buffered assemblies.
CMOS image sensors
Global and rolling shutter sensors packaged and tested to module level, with defect mapping and dark-current screening per die.
Infrared thermal imaging modules
Uncooled microbolometer cores with germanium optics, shutterless correction and a calibrated radiometric output.
Optical lenses and prisms
Spherical and aspheric lenses, windows, prisms and filter stacks in glass, fused silica, sapphire, silicon and zinc selenide.
LED epitaxial wafers and chips
GaN-on-sapphire and GaAs epitaxy grown by MOCVD, processed into flip-chip and vertical dies and binned by wavelength and flux.
Held in production
What the line holds, and how we know.
These are figures sustained across a production run rather than a best-case first article, each with the instrument or test that produces it.
| Characteristic | Held in production | Verified by |
|---|---|---|
| Laser centre wavelength | ±2 nm within a bin | Optical spectrum analyser, per device |
| Fibre attenuation at 1550 nm | ≤ 0.19 dB/km | OTDR on every drawn length |
| Surface figure | λ/20 PV at 632.8 nm | Zygo Fizeau interferometer |
| Surface quality | 10/5 scratch–dig | Inspection to MIL-PRF-13830B |
| Thermal imaging sensitivity | NETD ≤ 40 mK at f/1.0 | Blackbody reference bench |
| Epitaxial wavelength uniformity | ±1.5 nm across a wafer | Photoluminescence mapping |
| Hermetic seal integrity | < 1×10⁻⁶ mbar·l/s | Helium mass spectrometer |
Built and released against
- Telcordia GR-468-CORE qualification for optoelectronic devices
- ISO 10110 optical drawing and tolerancing practice
- ISO 14644 class 6 and class 7 cleanroom assembly
- JEDEC JESD22 environmental and reliability testing
- IEC 60825 laser product safety classification
Who buys it
- Fibre-optic telecommunications and data centres
- LiDAR and industrial ranging
- Machine vision and factory inspection
- Thermal imaging for building and utility survey
- Medical and analytical instrumentation
- General and horticultural lighting
Related work
Neighbouring industries.
Programmes often cross these lines. Where a part touches more than one of them, a single engineer owns the whole thing rather than handing it between departments.
All industriesSend a drawing or a specification.
An engineer from the optoelectronics team replies within one business day with feasibility, the line it would run on, the tooling route and an indicative delivered cost.